Effect of strain on GaN exciton spectraORTON, J. W.Semiconductor science and technology. 1996, Vol 11, Num 7, pp 1026-1029, issn 0268-1242Article

Exciton spectra and spin-orbit splitting in GaN epitaxial filmsORTON, J. W.Semiconductor science and technology. 1997, Vol 12, Num 1, pp 64-68, issn 0268-1242Article

Acceptor binding energy in GaN and related alloysORTON, J. W.Semiconductor science and technology. 1995, Vol 10, Num 1, pp 101-104, issn 0268-1242Article

The electrical characterization of semiconductors : majority carriers and electron statesBLOOD, P; ORTON, J. W.Techniques of physics. 1992, Num 14, pp i-xxiii, issn 0308-5392, 758 p.Serial Issue

The electrical characterization of semiconductors: measurement of minority carrier propertiesORTON, J. W; BLOOD, P.Techniques of physics. 1990, Num 13, issn 0308-5392, 308 p.Article

Recent developments in the characterisation of semiconductors by transport measurementsBLOOD, P; ORTON, J. W.Acta electronica. 1983, Vol 25, Num 2, pp 103-121, issn 0001-558XArticle

The relationship between space-charge-limited current and density of states in amorphous siliconORTON, J. W; POWELL, M. J.Philosophical magazine. B. Physics of condensed matter. Electronic, optical and magnetic properties. 1984, Vol 50, Num 1, pp 11-21, issn 0141-8637Article

The electron mobility and compensation in n-type GaNORTON, J. W; FOXON, C. T.Semiconductor science and technology. 1998, Vol 13, Num 3, pp 310-313, issn 0268-1242Article

Characteristics of amorphous silicon staggered-electrode thin-film transistorsPOWELL, M. J; ORTON, J. W.Applied physics letters. 1984, Vol 45, Num 2, pp 171-173, issn 0003-6951Article

Defect reduction in GaN epilayers and HFET structures grown on (0001)sapphire by ammonia MBEWEBB, James B; TANG, H; BARDWELL, J. A et al.Journal of crystal growth. 2001, Vol 230, Num 3-4, pp 584-589, issn 0022-0248Conference Paper

Microstructure and composition analysis of group III nitrides by X-ray scatteringFEWSTER, P. F; ANDREW, N. L; FOXON, C. T et al.Journal of crystal growth. 2001, Vol 230, Num 3-4, pp 398-404, issn 0022-0248Conference Paper

Investigation of metal-GaN and metal-AlGaN contacts by XPS depth profiles and by electrical measurementsDUMONT, J; MONROY, E; MUNOZ, E et al.Journal of crystal growth. 2001, Vol 230, Num 3-4, pp 558-563, issn 0022-0248Conference Paper

Luminescence studies of defects and piezoelectric fields in InGaN/GaN single quantum wellsHENLEY, S. J; BEWICK, A; CHERNS, D et al.Journal of crystal growth. 2001, Vol 230, Num 3-4, pp 481-486, issn 0022-0248Conference Paper

Polarization induced 2D hole gas in GaN/AlGaN heterostructuresHACKENBUCHNER, S; MAJEWSKI, J. A; ZANDLER, G et al.Journal of crystal growth. 2001, Vol 230, Num 3-4, pp 607-610, issn 0022-0248Conference Paper

Charge storage and screening of the internal field in GaN/AlGaN quantum wellsTRAETTA, G; DI CARLO, A; NATALI, M et al.Journal of crystal growth. 2001, Vol 230, Num 3-4, pp 492-496, issn 0022-0248Conference Paper

Algan photodetectors grown on Si(111) by molecular beam epitaxyPAU, J. L; MONROY, E; MUNOZ, E et al.Journal of crystal growth. 2001, Vol 230, Num 3-4, pp 544-548, issn 0022-0248Conference Paper

Characterization of etched facets for GaN-based lasersSCHERER, M; SCHWEGLER, V; SEYBOTH, M et al.Journal of crystal growth. 2001, Vol 230, Num 3-4, pp 554-557, issn 0022-0248Conference Paper

Selective area growth of GaN microstructures on patterned (111) and (001) Si substratesHONDA, Y; KAWAGUCHI, Y; OHTAKE, Y et al.Journal of crystal growth. 2001, Vol 230, Num 3-4, pp 346-350, issn 0022-0248Conference Paper

Thermally induced stress in GaN layers with regard to film coalescenceEINFELDT, S; BÖTTCHER, T; FIGGE, S et al.Journal of crystal growth. 2001, Vol 230, Num 3-4, pp 357-360, issn 0022-0248Conference Paper

Enhanced two-dimensional growth of MOVPE InN films on sapphire (0001) substratesYAMAMOTO, Akio; ADACHI, Masato; HASHIMOTO, Akihiro et al.Journal of crystal growth. 2001, Vol 230, Num 3-4, pp 351-356, issn 0022-0248Conference Paper

Optical and electrical properties of Be doped GaN bulk crystalsSUSKI, T; LITWIN-STASZEWSKA, E; PERLIN, P et al.Journal of crystal growth. 2001, Vol 230, Num 3-4, pp 368-371, issn 0022-0248Conference Paper

Emission studies of InGaN layers and LEDs grown by plasma-assisted MBELAUKKANEN, Pekka; LEHKONEN, Sami; UUSIMAA, Petteri et al.Journal of crystal growth. 2001, Vol 230, Num 3-4, pp 503-506, issn 0022-0248Conference Paper

Evidence of free carrier concentration gradient along the c-axis for undoped GaN single crystalsFRAYSSINET, E; KNAP, W; KRUKOWSKI, S et al.Journal of crystal growth. 2001, Vol 230, Num 3-4, pp 442-447, issn 0022-0248Conference Paper

Reduction of threading dislocations in migration enhanced epitaxy grown GaN with N-polarity by use of AlN multiple interlayerKUSAKABE, Kazuhide; KISHINO, Katsumi; KIKUCHI, Akihiko et al.Journal of crystal growth. 2001, Vol 230, Num 3-4, pp 387-391, issn 0022-0248Conference Paper

MBE growth and characterization of magnesium-doped gallium nitrideDEWSNIP, D. J; ORTON, J. W; BER, B. Ya et al.Semiconductor science and technology. 1998, Vol 13, Num 8, pp 927-935, issn 0268-1242Article